1. product profile 1.1 general description 75 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 3400 mhz to 3800 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance provid ing excellent thermal stability ? decoupling leads to enable improved video bandwidth ? designed for broadband operation (3400 mhz to 3800 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier a pplications in the 3400 mhz to 3800 mhz frequency range BLF8G38LS-75V power ldmos transistor rev. 2 ? 9 january 2014 preliminary data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 1-carrier w-cdma 3400 to 3800 600 30 20 15.5 26 ? 30 [1]
BLF8G38LS-75V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. preliminary data sheet rev. 2 ? 9 january 2014 2 of 11 nxp semiconductors BLF8G38LS-75V power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . d d d table 3. ordering information type number package name description version BLF8G38LS-75V - earless flanged ldmost ceramic package; 6 leads sot1239b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 20 w 0.48 k/w
BLF8G38LS-75V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. preliminary data sheet rev. 2 ? 9 january 2014 3 of 11 nxp semiconductors BLF8G38LS-75V power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G38LS-75V is capable of withstand ing a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =30 v; i dq =600ma; p l = 75 w; f = 3400 mhz. table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 153 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds = 30 v; i d = 600 ma 1.7 2.0 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -19.7-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =153ma - 0.9 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.35a -0.1- ? table 7. rf characteristics test signal: 1-carrier w-cdma, 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on the ccdf; f 1 =3400mhz; f 2 =3500mhz; f 3 = 3600 mhz; rf performance at v ds =30v; i dq = 600 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =20w 14.3 15.5 - db ? d drain efficiency p l(av) =20w 21 26 - % rl in input return loss p l(av) =20w - ? 10 ? 6db acpr 5m adjacent channel power ratio (5 mhz) p l(av) =20w - ? 30 ? 25 dbc
BLF8G38LS-75V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. preliminary data sheet rev. 2 ? 9 january 2014 4 of 11 nxp semiconductors BLF8G38LS-75V power ldmos transistor 7.2 test circuit printed-circuit board (pcb): arlon ad255c; ? r = 2.55; thickness = 0.762 mm. see table 8 for list of components. fig 1. component layout for test circuit table 8. list of components for test circuit, see figure 1 . component description value remarks c1, c5, c6, c11 multilayer cera mic chip capacitor 20 pf atc600f c2, c9 multilayer cera mic chip capacitor 10 ? fmurata c3, c8 multilayer ceramic chip capacitor 0.1 ? fmurata c4, c7 multilayer cerami c chip capacitor 0.01 ? fmurata c10 electrolytic capacitor 1000 ? f, 100 v r1 chip resistor 5.1 ? vishay dale smd 0805 d d d & |